Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...

Not Games offers shared progression and rewards across multiple new Telegram games, with Notcoin (NOT) token rewards for ...

Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

Canadian Bitcoin miner Bitfarms on Monday announced it had bought U.S.-based Stronghold Digital Mining with the deal valued ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Toshiba's new gate driver IC for brushed DC motors supports downsizing, low power use, and higher reliability in automotive ...