NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...
The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...
The input of a high-performance op-amp will almost certainly be a FET, for example. This half-bridge power MOSFET driver circuit uses a specialist gate driver IC with a pair of Schmidt buffers to ...
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