NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...

Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

In other words, the Spark 2 is the latest example of the "software-ization" of music. Forget the old image of a studio filled ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

The big change though is that the SRM-400S is an all FET design with dual FETs on the first stage and FETs also on the output ...

Frontgrade’s 28V GaN DC-DC Converter leverages advanced GaN FET technology to provide spacecraft ... mission processing subsystems, high power amplifiers, custom ASICs, motion control systems ...

Frontgrade’s 28V GaN DC-DC Converter leverages advanced GaN FET technology to provide spacecraft ... mission processing subsystems, high power amplifiers, custom ASICs, motion control systems ...

It's the power of transistors that have ... A schematic overview of a planar n-type MOSFET, with doped source and drain regions. (Image: Azal Alothmani, Lund University) When working as an amplifier, ...