NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...

Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

Nexperia has announced the addition of 12 new devices to its e-mode GaN FET portfolio ... (SR) power supplies in consumer devices, DC-DC converters in datacomms and telecoms equipment, photovoltaic ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Because of this need for power to create the electric fields in addition to the signal amplification, standard amplifiers won’t work with electrostatic ... The big change though is that the SRM-400S ...

REL subwoofers are renowned for their exceptional sound quality, innovative designs, and high-performance features, espe ...

Frontgrade’s 28V GaN DC-DC Converter leverages advanced GaN FET technology to provide spacecraft ... mission processing subsystems, high power amplifiers, custom ASICs, motion control systems ...

The latest additions to the company's e-mode GaN FET portfolio include new low-voltage 40V bi-directional devices (RDSon<12mOhm) to support OVP, load switching, and low-voltage applications, including ...