Power Integrations’s 5th-generation switcher ICs provide up to 175-W output and achieve 92% efficiency in classic flyback ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

The 8-bit microcontroller remains a vital component in embedded design due to its power efficiency, adaptability, and ...

The latest additions to the company's e-mode GaN FET portfolio include new low-voltage 40V bi-directional devices (RDSon<12mOhm) to support OVP, load switching, and low-voltage applications, including ...

Jurassic World in The Sandbox: Ethereum metaverse game The Sandbox is kicking off its fifth alpha season with a new in-game ...

Power device makers roll out their latest advances at APEC 2025, targeting a range of applications from AI data centers to ...

Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

A memo reveals plans to rename USAID to US International Humanitarian Assistance and integrate blockchain technology into its ...

Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...