NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...

Data centers power demands have grown considerably with LLMs, leaving power companies eager to show their solutions at APEC ...

TI unveils the first 48-V integrated hot-swap eFuse and a new family of integrated GaN power stages in TOLL packaging.

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

It's the power of transistors that have ... A schematic overview of a planar n-type MOSFET, with doped source and drain regions. (Image: Azal Alothmani, Lund University) When working as an amplifier, ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

The latest offering is the OptiMOS TDM24545S quad power module. It's a small, high-frequency (up to 2 MHz) DC-DC converter ...

SpaceX CEO Elon Musk admitted that his dream of a self-sustaining Mars colony will need vast resources to survive.

Not Games offers shared progression and rewards across multiple new Telegram games, with Notcoin (NOT) token rewards for ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...