Navitas Semiconductor Corporation. QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvement ...
Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the world for a diamond-based device, achieved a breakdown voltage of 550 V ...
State-of-the-art MOSFET handles higher peak currents delivering a cost-effective, high-performance and enhanced reliability hot swap solution The AOLV66935 utilizes AOS’ 100V AlphaSGT™ proprietary ...
Wolfspeed has announced the industry's first commercially available 10 kV SiC power MOSFET, describing it as setting a new ...
This powerful driver can source up to 2.5A with a 1.2 Ohm pull-down impedance for driving the top MOSFET and source 3A with a 0.55 Ohm pull-down impedance for the bottom MOSFET, making it ideal for ...
SUNNYVALE, Calif.--(BUSINESS WIRE)-- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of power discretes, ICs, modules, and ...
Designed for highly efficient, low- R DS(ON) power MOSFETs, the V-Tr FET technology developed by SilTerra Malaysia Sdn Bhd and South Sea Semiconductor Ltd. features a narrow-trench gate electrode with ...
Renesas Technology's Latest Integrated Driver-MOSFET Achieves Industry's Best Power Supply Efficiency – 96.5 percent – and Has a 6x6mm Package for Intel DrMOS Standard Products Renesas announced the ...
DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering. The report proposes an in-depth ...
DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, today introduced its new Gen 4 technology platform, which enables design rooted in ...
Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...